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On artefacts in the secondary ion mass spectrometry profiling of high fluence H+ implants in GaAs
Conference presentation

On artefacts in the secondary ion mass spectrometry profiling of high fluence H+ implants in GaAs

MJ Bailey, C Jeynes, BJ Sealy, RP Webb and RM Gwilliam
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol.268(11-12), pp.2051-2055
19th International Conference on Ion Beam Analysis (Univ Cambridge, Cambridge, ENGLAND, 07/09/2009 - 11/09/2009)
01/06/2010

Abstract

Science & Technology Instruments & Instrumentation Nuclear Science & Technology Atomic Molecular & Chemical Nuclear SIMS ERDA Blistering Hydrogen Exfoliation Smart-cut Ion-cut SILICON TEMPERATURE CUT SMART-CUT(C) SUBSTRATE SURFACE SURREY Technology Physical Sciences Physics
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