Photoreflectance characterisation of Ar+ ion etched and SiCl4 reactive ion etched silicon (100)

M Murtagh; SM Lynch; PV Kelly; S Hildebrant; PAF Herbert; C Jeynes; GM Crean

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Photoreflectance characterisation of Ar+ ion etched and SiCl4 reactive ion etched silicon (100)

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Photoreflectance characterisation of Ar+ ion etched and SiCl4 reactive ion etched silicon (100)

M Murtagh, SM Lynch, PV Kelly, S Hildebrant, PAF Herbert, C Jeynes and GM Crean

MATERIALS SCIENCE AND TECHNOLOGY, Vol.13(11), pp.961-964

1st International Conference on Materials for Microelectronics (BARCELONA, SPAIN, 17/10/1994 - 19/10/1994)

01/11/1997

Abstract

Science & Technology

Technology

Materials Science

Multidisciplinary

Metallurgy & Metallurgical Engineering

Materials Science

MATERIALS SCIENCE

MULTIDISCIPLINARY

METALLURGY & METALLURGICAL ENGINEERING

INDUCED DAMAGE

SEMICONDUCTORS

GAAS

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Title: Photoreflectance characterisation of Ar+ ion etched and SiCl4 reactive ion etched silicon (100)
Creators: M Murtagh
SM Lynch
PV Kelly
S Hildebrant
PAF Herbert
C Jeynes
GM Crean
Contributors: INST MATERIALS (Publisher)
Publication Details: MATERIALS SCIENCE AND TECHNOLOGY, Vol.13(11), pp.961-964
Conference: 1st International Conference on Materials for Microelectronics (BARCELONA, SPAIN, 17/10/1994 - 19/10/1994)
Date published: 01/11/1997
Date submitted: 17/05/2017
Identifiers: 99511918702346
Academic Unit: University of Surrey
Resource Type: Conference presentation

Photoreflectance characterisation of Ar+ ion etched and SiCl4 reactive ion etched silicon (100)

Abstract

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