Electrical isolation of n-type InP using MeV iron implantation at different doses and substrate temperatures

P Too; S Ahmed; C Jeynes; BJ Sealy; R Gwilliam

doi:10.1049/el:20020803

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Electrical isolation of n-type InP using MeV iron implantation at different doses and substrate temperatures

Journal article

Peer reviewed

Electrical isolation of n-type InP using MeV iron implantation at different doses and substrate temperatures

P Too, S Ahmed, C Jeynes, BJ Sealy and R Gwilliam

ELECTRONICS LETTERS, Vol.38(20), pp.1225-1226

26/09/2002

DOI: https://doi.org/10.1049/el:20020803

Abstract

Science & Technology

Technology

Engineering

Electrical & Electronic

Engineering

ENGINEERING

ELECTRICAL & ELECTRONIC

ION-IMPLANTATION

FE

LAYERS

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Title: Electrical isolation of n-type InP using MeV iron implantation at different doses and substrate temperatures
Creators: P Too
S Ahmed
C Jeynes
BJ Sealy
R Gwilliam
Publication Details: ELECTRONICS LETTERS, Vol.38(20), pp.1225-1226
Publisher: IEE-INST ELEC ENG
Date published: 26/09/2002
Date submitted: 17/05/2017
Identifiers: 99511875002346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Electrical isolation of n-type InP using MeV iron implantation at different doses and substrate temperatures

Abstract

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