The dependence of the radiation damage formation on the substrate implant temperature in GaN during Mg ion implantation

S Whelan; MJ Kelly; R Gwilliam; C Jeynes; C Bongiorno

doi:10.1063/1.1940142

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The dependence of the radiation damage formation on the substrate implant temperature in GaN during Mg ion implantation

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The dependence of the radiation damage formation on the substrate implant temperature in GaN during Mg ion implantation

S Whelan, MJ Kelly, R Gwilliam, C Jeynes and C Bongiorno

JOURNAL OF APPLIED PHYSICS, Vol.98(1), pp.?-?

01/07/2005

DOI: https://doi.org/10.1063/1.1940142

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Title: The dependence of the radiation damage formation on the substrate implant temperature in GaN during Mg ion implantation
Creators: S Whelan
MJ Kelly
R Gwilliam
C Jeynes
C Bongiorno
Publication Details: JOURNAL OF APPLIED PHYSICS, Vol.98(1), pp.?-?
Publisher: AMER INST PHYSICS
Date published: 01/07/2005
Date submitted: 27/05/2010
Identifiers: 99511656502346
Academic Unit: School of Computer Science and Electronic Engineering
Language: English
Resource Type: Journal article

The dependence of the radiation damage formation on the substrate implant temperature in GaN during Mg ion implantation

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