RBS/simulated annealing analysis of buried SiCOx layers formed by implantation of O into cubic silicon carbide

NP Barradas; C Jeynes; SM Jackson

doi:10.1016/S0168-583X(97)00686-1

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RBS/simulated annealing analysis of buried SiCOx layers formed by implantation of O into cubic silicon carbide

Journal article

Peer reviewed

RBS/simulated annealing analysis of buried SiCOx layers formed by implantation of O into cubic silicon carbide

NP Barradas, C Jeynes and SM Jackson

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol.136, pp.1168-1171

01/03/1998

DOI: https://doi.org/10.1016/S0168-583X(97)00686-1

Abstract

Science & Technology

Technology

Physical Sciences

Instruments & Instrumentation

Nuclear Science & Technology

Physics

Atomic

Molecular & Chemical

Physics

Nuclear

Physics

INSTRUMENTS & INSTRUMENTATION

NUCLEAR SCIENCE & TECHNOLOGY

PHYSICS

ATOMIC

MOLECULAR & CHEMICAL

PHYSICS

NUCLEAR

RBS

simulated annealing

cubic silicon carbide

buried silicon oxide

plural scattering

multiple scattering

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Title: RBS/simulated annealing analysis of buried SiCOx layers formed by implantation of O into cubic silicon carbide
Creators: NP Barradas
C Jeynes
SM Jackson
Publication Details: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol.136, pp.1168-1171
Publisher: ELSEVIER SCIENCE BV
Publication Date: 01/03/1998
Identifiers: 99511638602346; WOS:000074380400209
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

RBS/simulated annealing analysis of buried SiCOx layers formed by implantation of O into cubic silicon carbide

Abstract

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