Ultrashallow junctions in Si using decaborane? A molecular dynamics simulation study

R Smith; M Shaw; RP Webb; MA Foad

doi:10.1063/1.367072

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Ultrashallow junctions in Si using decaborane? A molecular dynamics simulation study

Journal article

Peer reviewed

Ultrashallow junctions in Si using decaborane? A molecular dynamics simulation study

R Smith, M Shaw, RP Webb and MA Foad

JOURNAL OF APPLIED PHYSICS, Vol.83(6), pp.3148-3152

15/03/1998

DOI: https://doi.org/10.1063/1.367072

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

PHYSICS

APPLIED

POTENTIALS

SILICON

SYSTEMS

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Title: Ultrashallow junctions in Si using decaborane? A molecular dynamics simulation study
Creators: R Smith
M Shaw
RP Webb
MA Foad
Publication Details: JOURNAL OF APPLIED PHYSICS, Vol.83(6), pp.3148-3152
Publisher: AMER INST PHYSICS
Publication Date: 15/03/1998
Identifiers: 99511635802346; WOS:000072640700043
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Ultrashallow junctions in Si using decaborane? A molecular dynamics simulation study

Abstract

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