Evolution of vacancy-related defects upon annealing of ion-implanted germanium

J Slotte; M Rummukainen; F Tuomisto; VP Markevich; AR Peaker; Christopher Jeynes; Russell Gwilliam

doi:10.1103/PhysRevB.78.085202

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Evolution of vacancy-related defects upon annealing of ion-implanted germanium

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Evolution of vacancy-related defects upon annealing of ion-implanted germanium

J Slotte, M Rummukainen, F Tuomisto, VP Markevich, AR Peaker, Christopher Jeynes and Russell Gwilliam

PHYSICAL REVIEW B, Vol.78(8), pp.?-?

01/08/2008

DOI: https://doi.org/10.1103/PhysRevB.78.085202

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Science & Technology

Physical Sciences

Physics

Condensed Matter

Physics

PHYSICS

CONDENSED MATTER

SILICON

SI

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Title: Evolution of vacancy-related defects upon annealing of ion-implanted germanium
Creators: J Slotte
M Rummukainen
F Tuomisto
VP Markevich
AR Peaker
Christopher Jeynes
Russell Gwilliam
Publication Details: PHYSICAL REVIEW B, Vol.78(8), pp.?-?
Publisher: AMER PHYSICAL SOC
Date published: 01/08/2008
Date submitted: 27/05/2010
Identifiers: 99511633502346
Academic Unit: School of Computer Science and Electronic Engineering
Language: English
Resource Type: Journal article

Evolution of vacancy-related defects upon annealing of ion-implanted germanium

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