Abstract
Although many lead zirconate titanate (PZT) based MEMS have been demonstrated, the thermal incompatibility problems associated with in-situ fabrication of PZT films on the device substrate remain a major challenge. Process temperatures of 600-700 °C are common for PZT on silicon, however these temperatures can degrade silicon microelectronics and metal interconnects. By depositing the film on a separate fabrication substrate, such as sapphire, and then using a pulsed UV laser to aid its transfer to the device substrate the problems of thermal incompatibility are avoided [1]. In order to gain a better understanding of the effects of the laser radiation on the interfacial region of the film originally adjacent to the sapphire substrate, we are examining the merits of dual-beam SEM focussed-ion- beam etching (FIBSEM, Nova 200 Nanolab, FEI UK Ltd). Microstructural information from SEM, together with preliminary results using FIBSEM are presented.