Electrical behaviour of arsenic implanted silicon wafers at large tilt angle

G Claudio; C Jeynes; KJ Kirkby; BJ Sealy; R Gwilliam; R Low; B Brown; TL Alford; M Nastasi; MC Vella

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Electrical behaviour of arsenic implanted silicon wafers at large tilt angle

Journal article

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Electrical behaviour of arsenic implanted silicon wafers at large tilt angle

G Claudio, C Jeynes, KJ Kirkby, BJ Sealy, R Gwilliam, R Low, B Brown, TL Alford, M Nastasi and MC Vella

IIT2002: ION IMPLANTATION TECHNOLOGY, PROCEEDINGS, pp.614-617

14th International Conference on Ion Implantation Technology (TAOS, NM, 18/09/2002 - 27/09/2002)

01/01/2003

Abstract

Science & Technology

Technology

Physical Sciences

Engineering

Manufacturing

Engineering

Electrical & Electronic

Physics

Applied

Physics

Condensed Matter

Engineering

Physics

component

tilt angle

arsenic

RBS

Hall effect

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Title: Electrical behaviour of arsenic implanted silicon wafers at large tilt angle
Creators: G Claudio
C Jeynes
KJ Kirkby
BJ Sealy
R Gwilliam
R Low
B Brown
TL Alford
M Nastasi
MC Vella
Contributors: IEEE (null)
Publication Details: IIT2002: ION IMPLANTATION TECHNOLOGY, PROCEEDINGS, pp.614-617
Event: 14th International Conference on Ion Implantation Technology (TAOS, NM, 18/09/2002 - 27/09/2002)
Date published: 01/01/2003
Date submitted: 16/09/2010
Identifiers: 99511311102346
Academic Unit: School of Computer Science and Electronic Engineering
Resource Type: Journal article

Electrical behaviour of arsenic implanted silicon wafers at large tilt angle

Abstract

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