Shallow junction formation by decaborane molecular ion implantation

MA Foad; R Webb; R Smith; J Matsuo; A Al-Bayati; T T-Sheng-Wang; Cullis

doi:10.1116/1.591245

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Shallow junction formation by decaborane molecular ion implantation

Journal article

Peer reviewed

Shallow junction formation by decaborane molecular ion implantation

MA Foad, R Webb, R Smith, J Matsuo, A Al-Bayati, T T-Sheng-Wang and Cullis

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol.18(1), pp.445-449

01/01/2000

DOI: https://doi.org/10.1116/1.591245

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Title: Shallow junction formation by decaborane molecular ion implantation
Creators: MA Foad
R Webb
R Smith
J Matsuo
A Al-Bayati
T T-Sheng-Wang
Cullis
Publication Details: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol.18(1), pp.445-449
Publisher: A V S AMER INST PHYSICS
Publication Date: 01/01/2000
Identifiers: 99511274802346; WOS:000085375600076
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Shallow junction formation by decaborane molecular ion implantation

Abstract

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