Temperature dependence of the current in Schottky-barrier source-gated transistors

RA Sporea; M Overy; JM Shannon; SRP Silva

doi:10.1063/1.4921114

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Temperature dependence of the current in Schottky-barrier source-gated transistors

Journal article

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Temperature dependence of the current in Schottky-barrier source-gated transistors

RA Sporea, M Overy, JM Shannon and SRP Silva

JOURNAL OF APPLIED PHYSICS, Vol.117(18), pp.?-?

14/05/2015

DOI: https://doi.org/10.1063/1.4921114

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

THIN-FILM TRANSISTORS

HYDROGENATED AMORPHOUS-SILICON

GAIN

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Title: Temperature dependence of the current in Schottky-barrier source-gated transistors
Creators: RA Sporea
M Overy
JM Shannon
SRP Silva
Publication Details: JOURNAL OF APPLIED PHYSICS, Vol.117(18), pp.?-?
Publisher: AMER INST PHYSICS
Date published: 14/05/2015
Date submitted: 06/06/2015
Identifiers: 99511210502346
Academic Unit: School of Computer Science and Electronic Engineering
Language: English
Resource Type: Journal article

Temperature dependence of the current in Schottky-barrier source-gated transistors

Abstract

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