Excitation of Er3+ ions in silicon dioxide films thermally grown on silicon

A Kozanecki; M Stepikhova; S Lanzerstorfer; W Jantsch; L Palmetshofer; BJ Sealy; C Jeynes

doi:10.1063/1.122633

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Excitation of Er3+ ions in silicon dioxide films thermally grown on silicon

Journal article

Peer reviewed

Excitation of Er3+ ions in silicon dioxide films thermally grown on silicon

A Kozanecki, M Stepikhova, S Lanzerstorfer, W Jantsch, L Palmetshofer, BJ Sealy and C Jeynes

APPLIED PHYSICS LETTERS, Vol.73(20), pp.2929-2931

16/11/1998

DOI: https://doi.org/10.1063/1.122633

Abstract

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Title: Excitation of Er3+ ions in silicon dioxide films thermally grown on silicon
Creators: A Kozanecki
M Stepikhova
S Lanzerstorfer
W Jantsch
L Palmetshofer
BJ Sealy
C Jeynes
Publication Details: APPLIED PHYSICS LETTERS, Vol.73(20), pp.2929-2931
Publisher: AMER INST PHYSICS
Publication Date: 16/11/1998
Identifiers: 99511188202346; WOS:000076848700025
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Excitation of Er3+ ions in silicon dioxide films thermally grown on silicon

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