Band anticrossing in GaNxSb1-x

PH Jefferson; TD Veal; LFJ Piper; BR Bennett; CF McConville; BN Murdin; L Buckle; GW Smith; T Ashley

doi:10.1063/1.2349832

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Band anticrossing in GaNxSb1-x

PH Jefferson, TD Veal, LFJ Piper, BR Bennett, CF McConville, BN Murdin, L Buckle, GW Smith and T Ashley

APPLIED PHYSICS LETTERS, Vol.89(11), pp.?-?

11/09/2006

DOI: https://doi.org/10.1063/1.2349832

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

PHYSICS

APPLIED

ALLOYS

SEMICONDUCTORS

PHOTOLUMINESCENCE

PARAMETERS

ABSORPTION

REDUCTION

GANASSB

GROWTH

GANSB

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Title: Band anticrossing in GaNxSb1-x
Creators: PH Jefferson
TD Veal
LFJ Piper
BR Bennett
CF McConville
BN Murdin
L Buckle
GW Smith
T Ashley
Publication Details: APPLIED PHYSICS LETTERS, Vol.89(11), pp.?-?
Publisher: AMER INST PHYSICS
Publication Date: 11/09/2006
Identifiers: 99511180002346; WOS:000240545400047
Academic Unit: School of Computer Science and Electronic Engineering; School of Maths and Physics
Language: English
Resource Type: Journal article

Band anticrossing in GaNxSb1-x

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