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Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans
Journal article   Open access  Peer reviewed

Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans

JA Sharp, NEB Cowern, RP Webb, KJ Kirkby, D Giubertoni, S Gennaro, M Bersani, MA Foad, F Cristiano and PF Fazzini
APPLIED PHYSICS LETTERS, Vol.89(19), pp.?-?
06/11/2006
DOI: https://doi.org/10.1063/1.2385215

Abstract

Science & Technology Physical Sciences Physics Applied Physics PHYSICS APPLIED ULTRA-SHALLOW JUNCTIONS THERMAL-STABILITY ACTIVATION REACTIVATION PROFILES DEFECTS DOPANTS
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