Bonding structure and hydrogen content in silicon nitride thin films deposited by the electron cyclotron resonance plasma method

FL Martinez; R Ruiz-Merino; A del Prado; E San Andres; I Martil; G Gonzalez-Diaz; C Jeynes; NP Barradas; L Wang; HS Reehal

doi:10.1016/j.tsf.2003.12.084

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Bonding structure and hydrogen content in silicon nitride thin films deposited by the electron cyclotron resonance plasma method

Conference presentation

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Bonding structure and hydrogen content in silicon nitride thin films deposited by the electron cyclotron resonance plasma method

FL Martinez, R Ruiz-Merino, A del Prado, E San Andres, I Martil, G Gonzalez-Diaz, C Jeynes, NP Barradas, L Wang and HS Reehal

THIN SOLID FILMS, Vol.459(1-2), pp.203-207

8th European Vacuum Congress (EVC-8)/2nd Annual Conference of the German-Vacuum-Society (DVG) (Berlin, GERMANY, 23/06/2003 - 26/06/2003)

01/07/2004

DOI: https://doi.org/10.1016/j.tsf.2003.12.084

Abstract

Science & Technology

Technology

Physical Sciences

Materials Science

Multidisciplinary

Materials Science

Coatings & Films

Physics

Applied

Physics

Condensed Matter

Materials Science

Physics

MATERIALS SCIENCE

COATINGS & FILMS

MATERIALS SCIENCE

MULTIDISCIPLINARY

PHYSICS

APPLIED

PHYSICS

CONDENSED MATTER

silicon nitride

hydrogen

bonding energy

network bond reactions

FREE-ENERGY MODEL

SI-SIO2 INTERFACES

ALLOYS

SI

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Title: Bonding structure and hydrogen content in silicon nitride thin films deposited by the electron cyclotron resonance plasma method
Creators: FL Martinez
R Ruiz-Merino
A del Prado
E San Andres
I Martil
G Gonzalez-Diaz
C Jeynes
NP Barradas
L Wang
HS Reehal
Contributors: ELSEVIER SCIENCE SA (Publisher)
Publication Details: THIN SOLID FILMS, Vol.459(1-2), pp.203-207
Conference: 8th European Vacuum Congress (EVC-8)/2nd Annual Conference of the German-Vacuum-Society (DVG) (Berlin, GERMANY, 23/06/2003 - 26/06/2003)
Date published: 01/07/2004
Date submitted: 17/05/2017
Identifiers: 99511042602346
Academic Unit: University of Surrey
Resource Type: Conference presentation

Bonding structure and hydrogen content in silicon nitride thin films deposited by the electron cyclotron resonance plasma method

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