TEMPERATURE-DEPENDENCE OF THE TRANSFERRED ELECTRON THRESHOLD CURRENTIN IN1-XGAXASYP1-Y

KC HEASMAN; J HAYES; AR ADAMS; PD GREENE

doi:10.1049/el:19810531

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TEMPERATURE-DEPENDENCE OF THE TRANSFERRED ELECTRON THRESHOLD CURRENTIN IN1-XGAXASYP1-Y

Journal article

Peer reviewed

TEMPERATURE-DEPENDENCE OF THE TRANSFERRED ELECTRON THRESHOLD CURRENTIN IN1-XGAXASYP1-Y

KC HEASMAN, J HAYES, AR ADAMS and PD GREENE

ELECTRONICS LETTERS, Vol.17(20), pp.756-757

01/01/1981

DOI: https://doi.org/10.1049/el:19810531

Abstract

Science & Technology

Technology

Engineering

Electrical & Electronic

Engineering

ENGINEERING

ELECTRICAL & ELECTRONIC

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Title: TEMPERATURE-DEPENDENCE OF THE TRANSFERRED ELECTRON THRESHOLD CURRENTIN IN1-XGAXASYP1-Y
Creators: KC HEASMAN
J HAYES
AR ADAMS
PD GREENE
Publication Details: ELECTRONICS LETTERS, Vol.17(20), pp.756-757
Publisher: IEE-INST ELEC ENG
Date published: 01/01/1981
Date submitted: 17/05/2017
Identifiers: 99511033902346
Academic Unit: University of Surrey; School of Maths and Physics
Language: English
Resource Type: Journal article

TEMPERATURE-DEPENDENCE OF THE TRANSFERRED ELECTRON THRESHOLD CURRENTIN IN1-XGAXASYP1-Y

Abstract

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