Abstract
Contact‐controlled transistor (CCT) architectures, represented primarily by source‐gated transistors (SGTs) and multimodal transistors (MMTs), are generating renewed interest as promising device options for active‐matrix current‐mode backplanes, offering behaviors that are difficult to access with conventional thin‐film field‐effect transistors. Adoption remains hesitant, in part because individual device metrics are often discussed in isolation, without a coherent device‐to‐circuit‐to‐system interpretation. Here, we provide a structured, application—facing analysis that relates defining CCT characteristics to electrical behavior and to outcomes in active‐matrix pixel driving. We highlight how low saturation voltage and flat output characteristics can reduce supply regimes, directly targeting dominant power terms during emission and enhancing uniformity. We address perceived drawbacks, notably, on‐current limitations and higher required gate overdrive, and show that within typical operating regimes, these are either non‐limiting or can be managed through device and circuit choices, e.g., asymmetric contact‐controlled switch implementations that decouple programming speed from retention. Finally, we frame energy efficiency at the panel level by considering qualitatively power draw in both the backplane and peripheral circuitry, and by discussing trade‐offs between refresh rate, operating voltages, and timing constraints.