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Free electron laser-induced bleaching of the intersubband absorption in semiconductor quantum wells
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Free electron laser-induced bleaching of the intersubband absorption in semiconductor quantum wells

B.N. Murdin, M. Helm, C.R. Pidgeon, K.K. Geerinck, N. Hovenyer, W.Th Wenckebach, A.F.G. van der Meer and P.W. van Amersfoort
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, Vol.341(1), pp.178-180
01/03/1994

Abstract

The intensity dependent intersubband absorption in GaAs/AlGaAs quantum wells with a subband separation smaller than the optical phonon energy has been measured with a pulsed far infrared free electron laser (FELIX). Complete bleaching of the absorption is observed at I = 100 kW/cm 2. When fitted with a two-level system, the saturation intensity is found to be 10 kW/cm 2, which corresponds to a characteristic time constant of 1–2 ps. Possible interpretations are discussed in the situation of finite FEL pulse width.

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