Abstract
This work demonstrates the benefits of low, but dominant, contact barriers in organic thin-film transistors (OTFTs) for threshold stability. Multimodal transistor measurements (≤ -8 V) confirm contact-controlled operation even when single-gate OTFTs produce apparent Ohmic behavior (dVSAT / dVGS ≈ 0.85). Simulations demonstrate that the contact-controlled nature of the device (contact energy barrier ΦB = 0.4 eV for hole mobility 2.7 cm2V-1s-1) promotes drain current stability with respect to interface charge-induced threshold variations, a finding with direct implications on emerging OTFT applications, e.g. displays, where simplified pixel design may lead to competitive new implementations. The stability and saturation properties also make such devices attractive to life sciences and distributed sensors applications.