Vacancy-type defects created by single-shot and chain ion implantation of silicon

PG Coleman; CJ Edwardson; AP Knights; RM Gwilliam

doi:10.1088/1367-2630/14/2/025007

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Vacancy-type defects created by single-shot and chain ion implantation of silicon

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Peer reviewed

Vacancy-type defects created by single-shot and chain ion implantation of silicon

PG Coleman, CJ Edwardson, AP Knights and RM Gwilliam

NEW JOURNAL OF PHYSICS, Vol.14, ARTN 02500

22/02/2012

DOI: https://doi.org/10.1088/1367-2630/14/2/025007

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Science & Technology

Physical Sciences

Physics

Multidisciplinary

Physics

PHYSICS

MULTIDISCIPLINARY

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Title: Vacancy-type defects created by single-shot and chain ion implantation of silicon
Creators: PG Coleman
CJ Edwardson
AP Knights
RM Gwilliam
Publication Details: NEW JOURNAL OF PHYSICS, Vol.14, ARTN 02500
Publisher: IOP PUBLISHING LTD
Date published: 22/02/2012
Date submitted: 17/05/2017
Identifiers: 99516563902346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Vacancy-type defects created by single-shot and chain ion implantation of silicon

Abstract

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