Vacancy-engineering implants for high boron activation in silicon on insulator

AJ Smith; NEB Cowern; R Gwilliam; BJ Sealy; B Colombeau; EJH Collart; S Gennaro; D Giubertoni; M Bersani; M Barozzi

doi:10.1063/1.2178487

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Vacancy-engineering implants for high boron activation in silicon on insulator

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Vacancy-engineering implants for high boron activation in silicon on insulator

AJ Smith, NEB Cowern, R Gwilliam, BJ Sealy, B Colombeau, EJH Collart, S Gennaro, D Giubertoni, M Bersani and M Barozzi

APPLIED PHYSICS LETTERS, Vol.88(8), pp.?-?

20/02/2006

DOI: https://doi.org/10.1063/1.2178487

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Science & Technology

Physical Sciences

Physics

Applied

Physics

PHYSICS

APPLIED

SI

DIFFUSION

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Title: Vacancy-engineering implants for high boron activation in silicon on insulator
Creators: AJ Smith
NEB Cowern
R Gwilliam
BJ Sealy
B Colombeau
EJH Collart
S Gennaro
D Giubertoni
M Bersani
M Barozzi
Publication Details: APPLIED PHYSICS LETTERS, Vol.88(8), pp.?-?
Publisher: AMER INST PHYSICS
Date published: 20/02/2006
Date submitted: 27/05/2010
Identifiers: 99516764302346
Academic Unit: School of Computer Science and Electronic Engineering
Language: English
Resource Type: Journal article

Vacancy-engineering implants for high boron activation in silicon on insulator

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