Abstract
With a precise control of temperature, gas flow, and pressure and with sequentially increased durations for reactions, the detailed processes of catalyzing, nucleation, and growth of the SiOx nanowires were successfully traced. Especially a stepwise nonuniformity in diameter of nanowire during the growth was for the first time detected. With analysis of these detailed processes via nanocurvature and nano ripening effects, a further understanding of the vapor-liquid-solid mechanism was achieved and a novel mechanism for formation of the stepwise nonuniformity in diameter of nanowire was particularly proposed. All these will be the crucial basis for the further, accurately controlled growth of SiOx nanowires and the relevant applications. (C) 2011 American Institute of Physics. [doi:10.1063/1.3574398]