Using SiO2 carrier confinement in total internal reflection optical switches to restrict carrier diffusion in the guiding layer

D Thomson; FY Gardes; GZ Mashanovich; AP Knights; GT Reed

doi:10.1109/JLT.2008.917083

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Using SiO2 carrier confinement in total internal reflection optical switches to restrict carrier diffusion in the guiding layer

Journal article

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Using SiO2 carrier confinement in total internal reflection optical switches to restrict carrier diffusion in the guiding layer

D Thomson, FY Gardes, GZ Mashanovich, AP Knights and GT Reed

JOURNAL OF LIGHTWAVE TECHNOLOGY, Vol.26(9-12), pp.1288-1294

01/05/2008

DOI: https://doi.org/10.1109/JLT.2008.917083

Abstract

Science & Technology

Technology

Physical Sciences

Engineering

Electrical & Electronic

Optics

Telecommunications

Engineering

ENGINEERING

ELECTRICAL & ELECTRONIC

OPTICS

TELECOMMUNICATIONS

carrier confinement

optical switch

silicon photonics

total internal reflection

WAVE-GUIDE

PLASMA DISPERSION

SILICON

OXIDATION

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Title: Using SiO2 carrier confinement in total internal reflection optical switches to restrict carrier diffusion in the guiding layer
Creators: D Thomson
FY Gardes
GZ Mashanovich
AP Knights
GT Reed
Publication Details: JOURNAL OF LIGHTWAVE TECHNOLOGY, Vol.26(9-12), pp.1288-1294
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Date published: 01/05/2008
Date submitted: 27/05/2010
Identifiers: 99516030902346
Academic Unit: School of Computer Science and Electronic Engineering
Language: English
Resource Type: Journal article

Using SiO2 carrier confinement in total internal reflection optical switches to restrict carrier diffusion in the guiding layer

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