Use of an asymmetric pulse profile for higher crystalline volumes from excimer laser crystallization of amorphous silicon

AADT Adikaari; NK Mudugamuwa; SRP Silva

doi:10.1063/1.2731664

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Use of an asymmetric pulse profile for higher crystalline volumes from excimer laser crystallization of amorphous silicon

AADT Adikaari, NK Mudugamuwa and SRP Silva

APPLIED PHYSICS LETTERS, Vol.90(17), pp.?-?

23/04/2007

DOI: https://doi.org/10.1063/1.2731664

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

PHYSICS

APPLIED

THIN-FILM TRANSISTORS

POLYCRYSTALLINE SILICON

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Title: Use of an asymmetric pulse profile for higher crystalline volumes from excimer laser crystallization of amorphous silicon
Creators: AADT Adikaari
NK Mudugamuwa
SRP Silva
Publication Details: APPLIED PHYSICS LETTERS, Vol.90(17), pp.?-?
Publisher: AMER INST PHYSICS
Date published: 23/04/2007
Date submitted: 27/05/2010
Identifiers: 99514131502346
Academic Unit: School of Computer Science and Electronic Engineering
Language: English
Resource Type: Journal article

Use of an asymmetric pulse profile for higher crystalline volumes from excimer laser crystallization of amorphous silicon

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