Uphill diffusion of ultralow-energy boron implants in preamorphized silicon and silicon-on-insulator

M Ferri; S Solmi; D Giubertoni; M Bersani; JJ Hamilton; M Kah; K Kirkby; EJH Collart; NEB Cowern

doi:10.1063/1.2812676

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Uphill diffusion of ultralow-energy boron implants in preamorphized silicon and silicon-on-insulator

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Uphill diffusion of ultralow-energy boron implants in preamorphized silicon and silicon-on-insulator

M Ferri, S Solmi, D Giubertoni, M Bersani, JJ Hamilton, M Kah, K Kirkby, EJH Collart and NEB Cowern

JOURNAL OF APPLIED PHYSICS, Vol.102(10), pp.?-?

15/11/2007

DOI: https://doi.org/10.1063/1.2812676

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

PHYSICS

APPLIED

OF-RANGE DEFECTS

DOPANT PROFILES

ULTRASHALLOW JUNCTION

SI/SIO2 INTERFACE

NEAR-SURFACE

ACTIVATION

BEHAVIOR

DAMAGE

MODEL

SI

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Title: Uphill diffusion of ultralow-energy boron implants in preamorphized silicon and silicon-on-insulator
Creators: M Ferri
S Solmi
D Giubertoni
M Bersani
JJ Hamilton
M Kah
K Kirkby
EJH Collart
NEB Cowern
Publication Details: JOURNAL OF APPLIED PHYSICS, Vol.102(10), pp.?-?
Publisher: AMER INST PHYSICS
Date published: 15/11/2007
Date submitted: 27/05/2010
Identifiers: 99516324202346
Academic Unit: School of Computer Science and Electronic Engineering
Language: English
Resource Type: Journal article

Uphill diffusion of ultralow-energy boron implants in preamorphized silicon and silicon-on-insulator

Abstract

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