Abstract
Table of contents: This review focuses on the development of devices combining three-dimensional structures and low-dimensional materials. With the deep explore of nano-devices, the improvement of device performance may not only depend on innovation at a certain level. By combining these two key design strategies, it is expected to achieve the highest gate control ability and device density in the post-Moore’s law era.
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Since the 1960s, the feature size of metal oxide semiconductor field-effect transistors has been scaled down to sub-micrometer and even nanometer to increase the transistor density on a chip according to the Moore’s law, leading to smaller device, faster speed and lower power consumption. In this process, various new materials and technologies have been introduced including SiGe strained silicon and high-k metal gate. Today, tremendous efforts are being made for the use of three-dimensional (3D) technologies such as fin-structured field-effect transistors, gate-all-around field-effect transistors and 3D integration. At the same time, low-dimensional materials such as carbon nanotubes, graphene and transition metal dichalcogenides are being extensively studied for nano-device fabrication. Here, the development of devices using both 3D structures and low-dimensional materials is reviewed. By combining these two key strategies, 3D transistors and integration based on low-dimensional materials are expected to achieve the highest gate control ability and device density, which is promising to continue the Moore’s law even further.