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Theory of threading edge and screw dislocations in GaN
Journal article   Peer reviewed

Theory of threading edge and screw dislocations in GaN

J Elsner, R Jones, PK Sitch, VD Porezag, M Elstner, T Frauenheim, MI Heggie, S Öberg and PR Briddon
Physical Review Letters, Vol.79(19), pp.3672-3675
10/11/1997

Abstract

The atomic structures, electrical properties, and line energies for threading screw and threading edge dislocations of wurtzite GaN are calculated within the local-density approximation. Both dislocations are electrically inactive with a band gap free from deep levels. These results are understood to arise from relaxed core structures which are similar to (1010) surfaces.

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