The properties and deposition process of GaN films grown by reactive sputtering at low temperatures

EC Knox-Davies; JM Shannon; SRP Silva

doi:10.1063/1.2186380

Back

The properties and deposition process of GaN films grown by reactive sputtering at low temperatures

Journal article

Open access

Peer reviewed

The properties and deposition process of GaN films grown by reactive sputtering at low temperatures

EC Knox-Davies, JM Shannon and SRP Silva

JOURNAL OF APPLIED PHYSICS, Vol.99(7), pp.?-?

01/04/2006

DOI: https://doi.org/10.1063/1.2186380

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

PHYSICS

APPLIED

NITRIDE THIN-FILMS

MOLECULAR-BEAM EPITAXY

GALLIUM NITRIDE

OPTICAL-PROPERTIES

GAAS

BIAS

ALN

Files and links (2)

pdf

fulltext402.64 kBDownload View

Text Open Access

url

http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000236770900010&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=11d2a86992e85fb529977dad66a846d5View

Author

Metrics

496 File views/ downloads

56 Record Views

22 Times Cited - Web of Science

Details

Title: The properties and deposition process of GaN films grown by reactive sputtering at low temperatures
Creators: EC Knox-Davies
JM Shannon
SRP Silva
Publication Details: JOURNAL OF APPLIED PHYSICS, Vol.99(7), pp.?-?
Publisher: AMER INST PHYSICS
Date published: 01/04/2006
Date submitted: 27/05/2010
Identifiers: 99516375402346
Academic Unit: School of Computer Science and Electronic Engineering
Language: English
Resource Type: Journal article

The properties and deposition process of GaN films grown by reactive sputtering at low temperatures

Abstract

Files and links (2)

Metrics

Details

Usage Policy