The lifetime distribution of excess carriers in H+ ion implanted silicon by photoconductive frequency resolved spectroscopy

MA Niby; DQ Li; MA Lourenco; A Nejim; KP Homewood; PLF Hemment; E Ishidida; M Current; S Banerjee; L Larson; S Mehta; A Tasch; TC Smith; T Romig

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The lifetime distribution of excess carriers in H+ ion implanted silicon by photoconductive frequency resolved spectroscopy

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The lifetime distribution of excess carriers in H+ ion implanted silicon by photoconductive frequency resolved spectroscopy

MA Niby, DQ Li, MA Lourenco, A Nejim, KP Homewood, PLF Hemment, E Ishidida, M Current, S Banerjee, L Larson, …

ION IMPLANTATION TECHNOLOGY - 96, pp.668-671

11th International Conference on Ion Implantation Technology (AUSTIN, TX, 16/06/1996–21/06/1996)

01/01/1997

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Title: The lifetime distribution of excess carriers in H+ ion implanted silicon by photoconductive frequency resolved spectroscopy
Creators: MA Niby
DQ Li
MA Lourenco
A Nejim
KP Homewood
PLF Hemment
E Ishidida
M Current
S Banerjee
L Larson
S Mehta
A Tasch
TC Smith
T Romig
Contributors: I E E E (null)
Publication Details: ION IMPLANTATION TECHNOLOGY - 96, pp.668-671
Event: 11th International Conference on Ion Implantation Technology (AUSTIN, TX, 16/06/1996–21/06/1996)
Publication Date: 01/01/1997
Identifiers: 99511218202346
Academic Unit: School of Computer Science & Electronic Engineering
Resource Type: Journal article

The lifetime distribution of excess carriers in H+ ion implanted silicon by photoconductive frequency resolved spectroscopy

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