The influence of the ion implantation temperature and the dose rate on smart-cut (c) in GaAs

M Webb; C Jeynes; R Gwilliam; P Too; A Kozanecki; J Domagala; A Royle; B Sealy

doi:10.1016/j.nimb.2005.06.104

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The influence of the ion implantation temperature and the dose rate on smart-cut (c) in GaAs

Journal article

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The influence of the ion implantation temperature and the dose rate on smart-cut (c) in GaAs

M Webb, C Jeynes, R Gwilliam, P Too, A Kozanecki, J Domagala, A Royle and B Sealy

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol.240(1-2), pp.142-145

01/10/2005

DOI: https://doi.org/10.1016/j.nimb.2005.06.104

Abstract

Science & Technology

Technology

Physical Sciences

Instruments & Instrumentation

Nuclear Science & Technology

Physics

Atomic

Molecular & Chemical

Physics

Nuclear

Physics

smart-cut

exfoliation

blistering

hydrogen implantation

TECHNOLOGY

SI

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Title: The influence of the ion implantation temperature and the dose rate on smart-cut (c) in GaAs
Creators: M Webb
C Jeynes
R Gwilliam
P Too
A Kozanecki
J Domagala
A Royle
B Sealy
Publication Details: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol.240(1-2), pp.142-145
Publisher: ELSEVIER SCIENCE BV
Date published: 01/10/2005
Date submitted: 12/08/2013
Identifiers: 99517016202346
Academic Unit: Department of Chemistry
Language: English
Resource Type: Journal article

The influence of the ion implantation temperature and the dose rate on smart-cut (c) in GaAs

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