The evolution of vacancy-type defects in silicon-on-insulator structures studied by positron annihilation spectroscopy

PG Coleman; D Nash; CJ Edwardson; AP Knights; RM Gwilliam

doi:10.1063/1.3605487

Back

The evolution of vacancy-type defects in silicon-on-insulator structures studied by positron annihilation spectroscopy

Journal article

Open access

Peer reviewed

The evolution of vacancy-type defects in silicon-on-insulator structures studied by positron annihilation spectroscopy

PG Coleman, D Nash, CJ Edwardson, AP Knights and RM Gwilliam

JOURNAL OF APPLIED PHYSICS, Vol.110(1), pp.?-?

01/07/2011

DOI: https://doi.org/10.1063/1.3605487

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

PHYSICS

APPLIED

IMPLANTED SI

CLUSTERS

ENERGY

BEAMS

AU

Files and links (3)

pdf

Gwilliam_The evolution of vacancy-type defects in silicon-on-insulator structures studied by positron785.78 kBDownload View

Open Access

url

http://dx.doi.org/10.1063/1.3605487View

Published (Version of record)

url

http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000292776500150&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=11d2a86992e85fb529977dad66a846d5View

Author

Metrics

179 File views/ downloads

18 Record Views

6 Times Cited - Web of Science

Details

Title: The evolution of vacancy-type defects in silicon-on-insulator structures studied by positron annihilation spectroscopy
Creators: PG Coleman
D Nash
CJ Edwardson
AP Knights
RM Gwilliam
Publication Details: JOURNAL OF APPLIED PHYSICS, Vol.110(1), pp.?-?
Publisher: AMER INST PHYSICS
Date published: 01/07/2011
Date submitted: 16/11/2011
Identifiers: 99511457702346
Academic Unit: School of Computer Science and Electronic Engineering
Language: English
Resource Type: Journal article

The evolution of vacancy-type defects in silicon-on-insulator structures studied by positron annihilation spectroscopy

Abstract

Files and links (3)

Metrics

Details

Usage Policy