The effect of aluminium on the post-anneal concentration of ion implanted bismuth in silica thin films

R Southern-Holland; MP Halsall; IF Crowe; P Yang; RM Gwilliam

doi:10.1016/j.nimb.2015.07.036

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The effect of aluminium on the post-anneal concentration of ion implanted bismuth in silica thin films

Journal article

Peer reviewed

The effect of aluminium on the post-anneal concentration of ion implanted bismuth in silica thin films

R Southern-Holland, MP Halsall, IF Crowe, P Yang and RM Gwilliam

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol.365, pp.86-88

15/12/2015

DOI: https://doi.org/10.1016/j.nimb.2015.07.036

Abstract

Science & Technology

Technology

Physical Sciences

Instruments & Instrumentation

Nuclear Science & Technology

Physics

Atomic

Molecular & Chemical

Physics

Nuclear

Physics

Bismuth

Aluminium

Rutherford backscattering spectroscopy

NEAR-INFRARED LUMINESCENCE

OPTICAL AMPLIFICATION

LASER

GLASS

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Title: The effect of aluminium on the post-anneal concentration of ion implanted bismuth in silica thin films
Creators: R Southern-Holland
MP Halsall
IF Crowe
P Yang
RM Gwilliam
Publication Details: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol.365, pp.86-88
Publisher: ELSEVIER SCIENCE BV
Date published: 15/12/2015
Date submitted: 17/05/2017
Identifiers: 99516300502346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

The effect of aluminium on the post-anneal concentration of ion implanted bismuth in silica thin films

Abstract

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