THE EFFECTS OF ION-IMPLANTATION ON THE INTERDIFFUSION COEFFICIENTS IN INXGA1-XAS/GAAS QUANTUM-WELL STRUCTURES

I BRADLEY; WP GILLIN; KP HOMEWOOD; RP WEBB

doi:10.1063/1.353204

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THE EFFECTS OF ION-IMPLANTATION ON THE INTERDIFFUSION COEFFICIENTS IN INXGA1-XAS/GAAS QUANTUM-WELL STRUCTURES

Journal article

Peer reviewed

THE EFFECTS OF ION-IMPLANTATION ON THE INTERDIFFUSION COEFFICIENTS IN INXGA1-XAS/GAAS QUANTUM-WELL STRUCTURES

I BRADLEY, WP GILLIN, KP HOMEWOOD and RP WEBB

JOURNAL OF APPLIED PHYSICS, Vol.73(4), pp.1686-1692

15/02/1993

DOI: https://doi.org/10.1063/1.353204

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

PHYSICS

APPLIED

HETEROSTRUCTURE LASERS

GAAS

SUPERLATTICES

ALGAAS

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Title: THE EFFECTS OF ION-IMPLANTATION ON THE INTERDIFFUSION COEFFICIENTS IN INXGA1-XAS/GAAS QUANTUM-WELL STRUCTURES
Creators: I BRADLEY
WP GILLIN
KP HOMEWOOD
RP WEBB
Publication Details: JOURNAL OF APPLIED PHYSICS, Vol.73(4), pp.1686-1692
Publisher: AMER INST PHYSICS
Date published: 15/02/1993
Date submitted: 17/05/2017
Identifiers: 99513388302346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

THE EFFECTS OF ION-IMPLANTATION ON THE INTERDIFFUSION COEFFICIENTS IN INXGA1-XAS/GAAS QUANTUM-WELL STRUCTURES

Abstract

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