Abstract
Tb doped AlN (AlN:Tb) nanobelts were prepared by in situ doping of Tb using a plasma-assisted arc discharge method. The structure, composition and morphology of the doped nanobelts were studied by means of X-ray diffraction, scanning and transmission electron microscopy and X-ray photoelectron spectroscopy, revealing that Tb ions have been introduced into the lattice of wurtzite-structured AlN nanobelts. The AlN:Tb nanobelts exhibit distinct emission peaks corresponding to intra-4f electron transitions of Tb3+ ions, and room temperature ferromagnetism, which make AlN:Tb nanobelts an excellent candidate for applications in future solid light-emitting diodes and spintronic nanodevices.
•The Tb doped AlN nanobelts were fabricated using modified arc discharge method.•The Tb doped AlN nanobelts exhibit an intensive green emission.•The Tb doped AlN nanobelts exhibit ferromagnetism at room temperature.