Abstract
2D semiconductors are promising for fabricating miniaturized and flexible electronic devices. The manipulation of polarities in 2D semiconductors is key to fabricate functional devices and circuits. However, the switchable and reversible control of polarity in 2D semiconductors is challenging due to their ultrathin body. Herein, a reversible and non‐destructive method is developed to dope 2D semiconductors by using ionic 2D minerals as the electrostatic gating. The 2D semiconductor channel can be reversibly transformed between n+ and p+ types with carrier concentrations of 1.59 × 1013 and 6.82 × 1012 cm−2, respectively. With the ability to in situ control carrier type and concentration in 2D semiconductors by ionic gating, a reversible PN/NP junction and programmable logic gate are demonstrated in such devices. This 2D mineral materials‐based ionic doping approach provides an alternative method for achieving multi‐functional and complex circuits in an all‐2D material flatform.
Accurately modulating carrier concentration and type is essential for developing logic devices. Ionic 2D mineral‐based electrostatic doping serves as a reversible method to achieve a wide range of carrier concentrations in 2D materials, enabling realization of programmable PN/NP junctions and Boolean logics in a single all‐2D material device.