Abstract
The effects of surface proximity and B concentration on end-of-range defect formation during nonmelt laser annealing in preamorphized silicon have been studied. These effects were analyzed by observing the activation and diffusion of an ultrashallow B implant, using Hall effect and secondary ion mass spectrometry measurements. By adjusting the preamorphizing implant and laser annealing conditions, B deactivation and diffusion were minimized, resulting in a sheet resistance of similar to 600 Omega/sq with a 16 nm junction depth. This is attributed to a combination of enhanced dissolution of end-of-range defects and preferential formation of B-interstitial clusters due to the surface proximity and high B concentration, respectively. (C) 2008 American Institute of Physics.