Structure of multi-oxygen-related defects in erbium-implanted silicon

JD Carey

doi:10.1088/0953-8984/14/36/310

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Structure of multi-oxygen-related defects in erbium-implanted silicon

Journal article

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Structure of multi-oxygen-related defects in erbium-implanted silicon

JD Carey

JOURNAL OF PHYSICS-CONDENSED MATTER, Vol.14(36), pp.8537-8547

15/09/2002

DOI: https://doi.org/10.1088/0953-8984/14/36/310

Abstract

Science & Technology

Physical Sciences

Physics

Condensed Matter

Physics

ELECTRON-PARAMAGNETIC-RESONANCE

CRYSTALLINE SILICON

INTERSTITIAL OXYGEN

DOPED SILICON

SI

ER

IDENTIFICATION

COMPLEXES

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Title: Structure of multi-oxygen-related defects in erbium-implanted silicon
Creators: JD Carey
Publication Details: JOURNAL OF PHYSICS-CONDENSED MATTER, Vol.14(36), pp.8537-8547
Publisher: IOP PUBLISHING LTD
Date published: 15/09/2002
Date submitted: 04/12/2012
Identifiers: 99515089202346
Academic Unit: School of Computer Science and Electronic Engineering
Language: English
Resource Type: Journal article

Structure of multi-oxygen-related defects in erbium-implanted silicon

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