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Stressed solid-phase epitaxial growth of ion-implanted amorphous silicon
Journal article   Peer reviewed

Stressed solid-phase epitaxial growth of ion-implanted amorphous silicon

NG Rudawski, KS Jones and R Gwilliam
MATERIALS SCIENCE & ENGINEERING R-REPORTS, Vol.61(1-6), pp.40-58
12/05/2008
DOI: https://doi.org/10.1016/j.mser.2008.02.002

Abstract

Science & Technology Technology Physical Sciences Materials Science Multidisciplinary Physics Applied Materials Science Physics MATERIALS SCIENCE MULTIDISCIPLINARY PHYSICS APPLIED silicon amorphous stress strain solid-phase epitaxial growth ion-implantation 2-DIMENSIONAL AMORPHIZED SI POINT-DEFECT MECHANISMS SINGLE-CRYSTAL SILICON EDGE-INDUCED STRESS FRACTURE-TOUGHNESS ORIENTATION DEPENDENCE CRYSTALLIZATION KINETICS NONHYDROSTATIC STRESS ELECTRON-MICROSCOPY ACTIVATION VOLUME
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