Stressed solid-phase epitaxial growth of (011) Si

NG Rudawski; KS Jones; R Gwilliam

doi:10.1557/JMR.2009.0056

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Stressed solid-phase epitaxial growth of (011) Si

Journal article

Peer reviewed

Stressed solid-phase epitaxial growth of (011) Si

NG Rudawski, KS Jones and R Gwilliam

JOURNAL OF MATERIALS RESEARCH, Vol.24(2), pp.305-309

01/02/2009

DOI: https://doi.org/10.1557/JMR.2009.0056

Abstract

Science & Technology

Technology

Materials Science

Multidisciplinary

Materials Science

MATERIALS SCIENCE

MULTIDISCIPLINARY

AMORPHOUS-SILICON

ACTIVATION VOLUME

INVERSION LAYERS

RATE SENSITIVITY

REGROWTH RATE

PRESSURE

ORIENTATION

CRYSTALLIZATION

TECHNOLOGY

ANISOTROPY

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Title: Stressed solid-phase epitaxial growth of (011) Si
Creators: NG Rudawski
KS Jones
R Gwilliam
Publication Details: JOURNAL OF MATERIALS RESEARCH, Vol.24(2), pp.305-309
Publisher: MATERIALS RESEARCH SOC
Date published: 01/02/2009
Date submitted: 17/05/2017
Identifiers: 99515321502346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Stressed solid-phase epitaxial growth of (011) Si

Abstract

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