Stress analysis of B doped silicon bridges and cantilever structures by Raman spectroscopy

MA Lourenco; DJ Gardiner; M Bowden; J Hedley; D Wood

doi:10.1023/A:1006752321075

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Stress analysis of B doped silicon bridges and cantilever structures by Raman spectroscopy

Journal article

Peer reviewed

Stress analysis of B doped silicon bridges and cantilever structures by Raman spectroscopy

MA Lourenco, DJ Gardiner, M Bowden, J Hedley and D Wood

JOURNAL OF MATERIALS SCIENCE LETTERS, Vol.19(9), pp.767-769

01/05/2000

DOI: https://doi.org/10.1023/A:1006752321075

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Science & Technology

Technology

Materials Science

Multidisciplinary

Materials Science

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Title: Stress analysis of B doped silicon bridges and cantilever structures by Raman spectroscopy
Creators: MA Lourenco
DJ Gardiner
M Bowden
J Hedley
D Wood
Publication Details: JOURNAL OF MATERIALS SCIENCE LETTERS, Vol.19(9), pp.767-769
Publisher: KLUWER ACADEMIC PUBL
Date published: 01/05/2000
Date submitted: 17/05/2017
Identifiers: 99512859902346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Stress analysis of B doped silicon bridges and cantilever structures by Raman spectroscopy

Abstract

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