Spatially correlated erbium and Si nanocrystals in coimplanted SiO2 after a single high temperature anneal

IF Crowe; RJ Kashtiban; B Sherliker; U Bangert; MP Halsall; AP Knights; RM Gwilliam

doi:10.1063/1.3294645

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Spatially correlated erbium and Si nanocrystals in coimplanted SiO2 after a single high temperature anneal

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Spatially correlated erbium and Si nanocrystals in coimplanted SiO2 after a single high temperature anneal

IF Crowe, RJ Kashtiban, B Sherliker, U Bangert, MP Halsall, AP Knights and RM Gwilliam

JOURNAL OF APPLIED PHYSICS, Vol.107(4), ARTN 04431

15/02/2010

DOI: https://doi.org/10.1063/1.3294645

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

PHYSICS

APPLIED

annealing

electron energy loss spectra

erbium

nanostructured materials

photoluminescence

scanning-transmission electron microscopy

silicon

silicon compounds

SILICON NANOCRYSTALS

OPTICAL GAIN

AMORPHOUS-SILICON

ENERGY-TRANSFER

DOPED SILICON

MU-M

ER

PHOTOLUMINESCENCE

LUMINESCENCE

IONS

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Title: Spatially correlated erbium and Si nanocrystals in coimplanted SiO2 after a single high temperature anneal
Creators: IF Crowe
RJ Kashtiban
B Sherliker
U Bangert
MP Halsall
AP Knights
RM Gwilliam
Publication Details: JOURNAL OF APPLIED PHYSICS, Vol.107(4), ARTN 04431
Publisher: AMER INST PHYSICS
Date published: 15/02/2010
Date submitted: 17/05/2017
Identifiers: 99513354402346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Spatially correlated erbium and Si nanocrystals in coimplanted SiO2 after a single high temperature anneal

Abstract

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