Self-Heating Effects In Polysilicon Source Gated Transistors

RA Sporea; T Burridge; SRP Silva

doi:10.1038/srep14058

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Self-Heating Effects In Polysilicon Source Gated Transistors

Journal article

Peer reviewed

Self-Heating Effects In Polysilicon Source Gated Transistors

RA Sporea, T Burridge and SRP Silva

SCIENTIFIC REPORTS, Vol.5, pp.?-?

09/09/2015

DOI: https://doi.org/10.1038/srep14058

Abstract

Science & Technology

Multidisciplinary Sciences

Science & Technology - Other Topics

THIN-FILM TRANSISTORS

FIELD-EFFECT TRANSISTORS

HYDROGENATED AMORPHOUS-SILICON

HIGH-PERFORMANCE

TEMPERATURE-DEPENDENCE

ORGANIC TRANSISTOR

N-TYPE

GAS SENSORS

MOBILITY

SEMICONDUCTORS

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Title: Self-Heating Effects In Polysilicon Source Gated Transistors
Creators: RA Sporea
T Burridge
SRP Silva
Publication Details: SCIENTIFIC REPORTS, Vol.5, pp.?-?
Publisher: NATURE PUBLISHING GROUP
Date published: 09/09/2015
Date submitted: 07/10/2015
Identifiers: 99514798502346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Self-Heating Effects In Polysilicon Source Gated Transistors

Abstract

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