Schottky contacts on CF4/H2 reactive ion etched β-SiC

G Constantinidis; J Kuzmic; K Michelakis; K Tsagaraki

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Schottky contacts on CF4/H2 reactive ion etched β-SiC

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Schottky contacts on CF4/H2 reactive ion etched β-SiC

G Constantinidis, J Kuzmic, K Michelakis and K Tsagaraki

Solid-State Electronics, Vol.42(2), pp.253-256

16/03/1998

Abstract

CVD grown n-type β-SiC grown on a (100) Si substrate was reactive ion etched (RIE) in CF4/H2 gas mixtures. The etched surfaces were examined by SEM, FTIR-spectroscopy and AFM. Au Schottky diodes fabricated on the etched surface were compared to reference contacts on the non-etched surface. An oxidation step following the dry etching drastically improves the diode characteristics. © 1998 Elsevier Science Ltd. All rights reserved.

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Title: Schottky contacts on CF4/H2 reactive ion etched β-SiC
Creators: G Constantinidis
J Kuzmic
K Michelakis
K Tsagaraki
Publication Details: Solid-State Electronics, Vol.42(2), pp.253-256
Date published: 16/03/1998
Date submitted: 17/05/2017
Identifiers: 99516146002346
Academic Unit: University of Surrey
Resource Type: Journal article

Schottky contacts on CF4/H2 reactive ion etched β-SiC

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