Schottky contact investigation on reactive ion etched 6H α-SiC

G Constantinidis; J Kuzmik; K Michelakis

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Schottky contact investigation on reactive ion etched 6H α-SiC

Journal article

Peer reviewed

Schottky contact investigation on reactive ion etched 6H α-SiC

G Constantinidis, J Kuzmik and K Michelakis

Diamond and Related Materials, Vol.6(10), pp.1459-1462

01/08/1997

Abstract

Reactive Ion Etching (RIE) was performed on monocrystalline 6H α-SiC samples with CF4/H2-based gas mixtures. Schottky contacts on RIE etched α-SiC were compared with reference Schottky contacts on non-etched α-SiC. © 1997 Elsevier Science S.A.

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Title: Schottky contact investigation on reactive ion etched 6H α-SiC
Creators: G Constantinidis
J Kuzmik
K Michelakis
Publication Details: Diamond and Related Materials, Vol.6(10), pp.1459-1462
Date published: 01/08/1997
Date submitted: 17/05/2017
Identifiers: 99515858302346
Academic Unit: University of Surrey
Resource Type: Journal article

Schottky contact investigation on reactive ion etched 6H α-SiC

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