Room temperature photoluminescence at 4.5um from InAsN

Journal article

Peer reviewed

KT Lai

JOURNAL OF APPLIED PHYSICS, Vol.103(6), pp.063520-063520

26/03/2008

Abstract

photoluminescence

III-V semiconductors

molecular beam epitaxial growth

indium compounds

arsenic compounds

url

http://jap.aip.org/View

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Title: Room temperature photoluminescence at 4.5um from InAsN
Creators: KT Lai
Publication Details: JOURNAL OF APPLIED PHYSICS, Vol.103(6), pp.063520-063520
Publisher: American Institute of Physics
Date published: 26/03/2008
Date submitted: 17/05/2017
Identifiers: 99514801002346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article