Room Temperature Grown High-Quality Polymer-Like Carbon Gate Dielectric for Organic Thin-Film Transistors

L Feng; JV Anguita; W Tang; J Zhao; X Guo; SRP Silva

doi:10.1002/aelm.201500374

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Journal article

Room Temperature Grown High-Quality Polymer-Like Carbon Gate Dielectric for Organic Thin-Film Transistors

L Feng, JV Anguita, W Tang, J Zhao, X Guo and SRP Silva

ADVANCED ELECTRONIC MATERIALS, Vol.2(3), ARTN 15003

01/03/2016

DOI: https://doi.org/10.1002/aelm.201500374

Abstract

Science & Technology

Technology

Physical Sciences

Nanoscience & Nanotechnology

Materials Science

Multidisciplinary

Physics

Applied

Science & Technology - Other Topics

Materials Science

Physics

FIELD-EFFECT TRANSISTORS

HYDROGENATED AMORPHOUS-CARBON

DEPOSITION

SEMICONDUCTORS

PLASMA

C2H2

TRANSPONDERS

ELECTRONICS

INSULATOR

CIRCUITS

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Title: Room Temperature Grown High-Quality Polymer-Like Carbon Gate Dielectric for Organic Thin-Film Transistors
Creators: L Feng
JV Anguita
W Tang
J Zhao
X Guo
SRP Silva
Publication Details: ADVANCED ELECTRONIC MATERIALS, Vol.2(3), ARTN 15003
Publisher: WILEY-BLACKWELL
Date published: 01/03/2016
Date submitted: 17/05/2017
Identifiers: 99513950802346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Room Temperature Grown High-Quality Polymer-Like Carbon Gate Dielectric for Organic Thin-Film Transistors

Abstract

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