Abstract
Featured Application
Knowledge of temperature dependence of refractive indices of Ge and Si at THz frequencies is required in many applications where these materials are used for THz devices and optical components.
Refractive indices of high resistivity Si and Ge were measured at temperatures between 4-296 K and at frequencies between 4.2-7.7 THz using a Fourier-transform spectrometer (FTS) in transmission mode. A phenomenological model of the temperature dependence of the refractive index is proposed.