Rearrangement of the oxide-semiconductor interface in annealed Al2O3/4H-SiC structures

M Avice; S Diplas; A Thogersen; JS Christensen; U Grossner; BG Svensson; O Nilsen; H Fjellvag; JF Watts

doi:10.1063/1.2757608

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Rearrangement of the oxide-semiconductor interface in annealed Al2O3/4H-SiC structures

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Rearrangement of the oxide-semiconductor interface in annealed Al2O3/4H-SiC structures

M Avice, S Diplas, A Thogersen, JS Christensen, U Grossner, BG Svensson, O Nilsen, H Fjellvag and JF Watts

APPLIED PHYSICS LETTERS, Vol.91(5), pp.?-?

30/07/2007

DOI: https://doi.org/10.1063/1.2757608

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Title: Rearrangement of the oxide-semiconductor interface in annealed Al2O3/4H-SiC structures
Creators: M Avice
S Diplas
A Thogersen
JS Christensen
U Grossner
BG Svensson
O Nilsen
H Fjellvag
JF Watts
Publication Details: APPLIED PHYSICS LETTERS, Vol.91(5), pp.?-?
Publisher: AMER INST PHYSICS
Date published: 30/07/2007
Date submitted: 27/05/2010
Identifiers: 99516109002346
Academic Unit: Department of Mechanical Engineering Sciences
Language: English
Resource Type: Journal article

Rearrangement of the oxide-semiconductor interface in annealed Al2O3/4H-SiC structures

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