Abstract
Doped 2D transition metal dichalcogenides have attracted much attention as room-temperature ferromagnetism can be realized in such semiconductors. For example, the magnetism of vanadium-doped WS2 (V-WS2) has been revealed, but there is still confusion about how the substituted vanadium atoms affect the carrier scattering of V-WS2. Here, we study the electron-phonon coupling and carrier scattering of V-WS2 by temperature-dependent Raman spectroscopy and electrical transport measurements. We identify a characteristic Raman peak at similar to 212 cm(-1), a fingerprint for V-WS2. We also reveal that the electron-phonon coupling is strengthened in V-WS2 and becomes more sensitive to temperature, which suppresses the carrier mobility and improves the sensitivity of its electronic performance to temperature. Moreover, the substituted vanadium not only causes an n- to p-type transition of the carrier transport behavior but also serves as charged impurities, making ionization scattering dominate the carrier transport process in V-WS2. Such modulation of carrier transport behavior in V-WS2 will facilitate its application in electronic and spintronic devices.