Properties of nanocrystalline GaN films deposited by reactive sputtering

EC Knox-Davies; SRP Silva; JM Shannon

doi:10.1016/S0925-9635(03)00171-7

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Properties of nanocrystalline GaN films deposited by reactive sputtering

Journal article

Peer reviewed

Properties of nanocrystalline GaN films deposited by reactive sputtering

EC Knox-Davies, SRP Silva and JM Shannon

DIAMOND AND RELATED MATERIALS, Vol.12(8), pp.1417-1421

01/08/2003

DOI: https://doi.org/10.1016/S0925-9635(03)00171-7

Abstract

Science & Technology

Technology

Materials Science

Multidisciplinary

Materials Science

MATERIALS SCIENCE

MULTIDISCIPLINARY

gallium nitride

sputtering

optical properties characterisation

vibrational properties characterisation

GALLIUM NITRIDE FILMS

LOW-TEMPERATURE

THIN-FILMS

GROWTH

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Title: Properties of nanocrystalline GaN films deposited by reactive sputtering
Creators: EC Knox-Davies
SRP Silva
JM Shannon
Publication Details: DIAMOND AND RELATED MATERIALS, Vol.12(8), pp.1417-1421
Publisher: ELSEVIER SCIENCE SA
Date published: 01/08/2003
Date submitted: 17/05/2017
Identifiers: 99513454702346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Properties of nanocrystalline GaN films deposited by reactive sputtering

Abstract

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